Samsung confirmed, 3nm chips will manufacture next year, expect 2nm in 2025

Samsung Electronics is also known as a world leader in advanced semiconductor technology. Recently, at the 5th annual Samsung Foundry Forum (SFF) 2021, the company revealed its plans for continuous process technology migration to 3- and 2-nanometer (nm) based on Gate-All-Around (GAA) transistor structure.

3nm next year, followed by 2nm in 2025

Samsung’s unique GAA technology, Multi-Bridge-Channel FET (MBCFETTM), is essential for continuing process migration with enhanced power, performance, and flexible design capability.

The company’s first 3nm GAA process node utilizing MBCFET will allow up to a 35 percent decrease in area, 30 percent higher performance, or 50 percent lower power consumption compared to the 5nm process.

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Aside from the power, performance, and area (PPA) improvements, as its process maturity has increased, 3nm’s logic yield is approaching a similar level to the 4nm process, which is currently in mass production.

Per the info, Samsung is scheduled to start producing its customers’ first 3nm-based chip designs in the first half of 2022, while its second generation of 3nm is expected in 2023.

On the other hand, the newly added to Samsung’s technology roadmap, the 2nm process node with MBCFET is in the early stages of development with mass production in 2025.