Samsung began mass production of industry’s smallest 14nm EUV DDR5 DRAM

Samsung Electronics, a leading provider of advanced memory technology, today announced the mass production of the industry’s smallest 14-nanometer (nm), DRAM based on advanced ultraviolet (EUV) technology.

Following the launch of EUV DRAM’s first industrial company in March last year, Samsung has upgraded the number of EUV layers to five to deliver today’s most advanced, highly developed DRAM process with its DDR5 solutions.

As DRAM continues to reduce the range by 10nm, EUV technology is becoming increasingly important to improve the accuracy of high-performance measurements and high yields.

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By using five EUV layers in its 14nm DRAM, Samsung has achieved enormous size while developing a complete product by about 20%. In addition, the 14nm process can help reduce power consumption by about 20% compared to the previous generation DRAM node.

Using the latest DDR5 rating, Samsung’s 14nm DRAM will help unlock unprecedented speeds of up to 7.2 gigabits per second (Gbps), which is twice the DDR4 speeds of up to 3.2Gbps.

Samsung plans to expand its 14nm DDR5 portfolio to support data centers, supercomputer applications, and business services. Also, Samsung expects to increase its 14nm DRAM chip density to 24Gb to better meet the rapidly growing data needs of the global IT system.