Samsung initiates 3nm chip production with GAA architecture

Last week, a Korean media outlet revealed that Samsung will soon announce the mass production of its 3nm (using GAA) chip. And today, the company has officially confirmed that it’s beginning the chip production using 3nm process technology with advanced GAA architecture.

Unlike previous generations of chips that used FinFETs, Samsung uses the GAA (Gate All Around) transistor architecture, which greatly improves power efficiency. In a statement, Samsung said that the 1st gen 3nm process (GAA) chip reduces power consumption by 45 percent, improves performance by 23 percent, and reduces the area by 16 percent compared to conventional 5-nanometer chips.

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Aside from this, the Korean tech giant revealed that a second-generation 3-nanometer GAA manufacturing process is also under development, which will reduce chip power consumption by up to 50 percent, increase performance by 30 percent, and reduce the area by 35 percent.

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In addition to Samsung, Taiwan’s TSMC as well as Intel plan to start mass production of 3nm chips in the second half of this year and the second half of next year, respectively. While Samsung becomes the first to start 3nm chip production, TSMC aims to achieve mass production of 2-nanometer chips in 2025.

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