Samsung unveiled its first 12nm DDR5 DRAM

Samsung today officially introduced the first 16-gigabit DDR5 DRAM, which uses 12-nanometer process technology. The company announced the successful development of 12nm DDR5.

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Samsung‘s new DDR5 era has arrived and the new DRAM is expected to be the basis for more sustainable operations in areas such as next-generation computing, data centers, and AI-powered systems with its exceptionally robust performance and high energy efficiency.

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Samsung 12nm DDR5 DRAM

The 12nm DDR5 DRAM has been made possible through the use of new high-κ materials that increase battery capacity. Additionally, proprietary design technology improves key circuit characteristics.

With an advanced multi-layer ultraviolet lithography combination, the new DRAM has the highest density of memory chips available today and can increase wafer throughput by up to 20%.

The new Samsung DRAM in the 12nm class uses the latest DDR5 standard, so it can reach speeds of up to 7.2 gigabits per second (Gbps) which is equal to processing two 30 GB Ultra HD movies in one second.

The higher speed of the new DRAM goes hand in hand with greater power efficiency. The 12nm-class DRAM consumes 23 percent less power than the previous RAMs, making it an ideal solution for global IT companies working to enable greener business processes.

The Korean tech giant aims to make its 12nm DRAM lineup available across various market segments with mass production set to begin in 2023. Besides this, the company also plans to continue working with industry partners to support the rapid scaling of next-generation computing.