Samsung 12nm 16GB DDR5 DRAM begins mass production

Samsung started mass production of 16GB DDR5 DRAM with the world’s most advanced 12nm process. The company’s 12nm DRAM features cutting-edge technology, and its productivity has improved by about 20% compared to previous-generation products.

Its power consumption has been reduced by about 23% compared to the previous generation while enhancing wafer productivity by up to 20%. Samsung 12nm DDR5 DRAM is likely to be the best solution for global IT companies actively participating in reducing carbon emissions and energy use.

The South Korean tech giant increased the capacity of the capacitor that stores charge by applying a new material with a high permittivity (K). As the capacitance of the DRAM increases, the potential difference between the data signals increases, making it easier to distinguish them.

“Using differentiated process technology, Samsung’s industry-leading 12nm-class DDR5 DRAM delivers outstanding performance and power efficiency,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Elec.

12nm DDR5 DRAM supports maximum operating speed of 7.2Gbps

This is a speed that can process two 30GB UHD movies in one second. Samsung Electronics plans to continuously expand its 12-nano class DRAM lineup to meet customer demand and supply it to various applications such as data centers, artificial intelligence, and next-generation computing.

The company has already completed its 16-gigabit DDR5 DRAM evaluation for compatibility with AMD in December 2022 and continues to collaborate with global IT companies to drive innovation in the next-generation DRAM market.

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