Samsung
Samsung introduces ‘Shinebolt’ HBM3E memory
Samsung today held its annual Memory Tech Day to showcase industry-first innovations and new memory products. At the event, Samsung revealed its next-generation HBM3E DRAM, named Shinebolt, which will power next-gen AI applications.
The new “Shinebolt” HBM3E Memory from Samsung helps speed up AI-model training and inference in the data center. It boasts an impressive speed of 9.8 Gbps per pin speed, meaning it can achieve transfer rates exceeding up to more than 1.2 TBps.
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As part of enabling higher-layer stacks and improving thermal characteristics, the South Korean tech giant has optimized its NCF (non-conductive film) technology to eliminate gaps between chip layers and maximize thermal conductivity.
Samsung’s 8H and 12H HBM3 products are currently in mass production and samples for Shinebolt are shipping to customers.
