Samsung forms cutting-edge memory R&D center in Silicon Valley, USA

Samsung has built a giant semiconductor production plan in Texas, United States. While the factory is yet to begin mass production of chips, Samsung has formed a cutting-edge memory R&D (research and development) organization in Silicon Valley, USA.

The newly established Samsung cutting-edge memory R&D center is responsible for proactively researching and developing 3D DRAM in Silicon Valley, USA. The plan is to actively recruit excellent human resources from Silicon Valley and cooperate with various semiconductor ecosystems.

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The South Korean tech giant has set out to secure differentiated technological competitiveness in the future semiconductor market by creating a memory research and development (R&D) organization focusing on developing three-dimensional (3D) DRAM.

Currently, DRAM is a 2D structure with tens of billions of memory elements arranged on a flat surface. 3D DRAM is a concept in which memory elements inside a chip are stacked vertically like an apartment. It is the same concept as NAND flash developed into 3D stacking.

// ETNews