Samsung Electronics becomes first to develop 36GB HBM3E 12H DRAM

Samsung Electronics has become industr’s first manufacturer to develop 36GB HBM3E 12H DRAM. It provides an all-time high bandwidth of up to 1,280 gigabytes per second and an industry-leading capacity of 36 gigabytes. In comparison to the 8-stack HBM3 8H, both aspects have improved by more than 50%.

The industry’s first 36GB HBM3E 12H applies advanced thermal compression non-conductive film, allowing the 12-layer products to have the same height specification as 8-layer ones to meet current HBM package requirements. The technology is anticipated to have added benefits especially with higher stacks.

In this development, Samsung Electronics has continued to lower the thickness of its NCF material and achieved the industry’s smallest gap between chips at seven micrometers (µm), while also eliminating voids between layers. These efforts result in enhanced vertical density by over 20% compared to its HBM3 8H product.

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This HBM3E 12H is expected to be an optimal solution for future systems that require more memory. Its higher performance and capacity will allow customers to manage their resources more flexibly. However, Samsung has begun sampling its HBM3E 12H DRAM to customers and will begin mass production in first half of this year.

Executive Vice President of Memory Product Planning at Samsung Electronics said,

• “The industry’s AI service providers are increasingly requiring HBM with higher capacity, and our new HBM3E 12H product has been designed to answer that need,” “This new memory solution forms part of our drive toward developing core technologies for high-stack HBM and providing technological leadership for the high-capacity HBM market in the AI era.”