Samsung
Samsung HBM3E 12H DRAM got approval from Nvidia CEO
Samsung Electronics has become the industry’s first manufacturer to develop 36GB HBM3E 12H DRAM and recently this next-generation high-bandwidth memory (HBM) was approved by Nvidia CEO. Let’s dive into the details and check out the exact matter.
On March 20, the CEO of Nvidia Jensen Huang was on a visit to the partner exhibits at GTC 2024 at the San Jose Convention Center in California, US. During this visit, Huang stopped by the Samsung Electronics booth and examined the showcased HBM3E DRAM.
Yes, the executive not only inspected but also left his mark by signing “Jensen Approved” beside the product ad this moment was captured and shared by Han Jin-man, Samsung Electronics executive vice president of the U.S. DS division.
The executive of Samsung Electronics posted a photo on LinkedIn with the caption, “Jensen Huang gave his personal stamp of approval on our HBM3E.” Samsung further clarified that the signature does not imply Nvidia will immediately adopt the HBM3E.
In response to inquiries at a global press conference the day before about Nvidia’s current non-use of Samsung’s HBM, Huang replied, “We haven’t started using it. We are still qualifying it.”
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Samsung 36GB HBM3E 12H DRAM
Samsung 36GB HBM3E 12H DRAM provides an all-time high bandwidth of up to 1,280 gigabytes per second and an industry-leading capacity of 36 gigabytes. It also applies advanced thermal compression non-conductive film, allowing the 12-layer products to have the same height specification as 8-layer ones to meet current HBM package requirements
