Samsung 9th Gen V-NAND features 50% improved bit density

The industry’s first 9th Gen V-NAND entered the mass production stage, Samsung announced. Samsung improved the bit density of the 9th-generation V-NAND by about 50% compared to the previous generation.

Samsung highlights productivity for the 9th Gen V-NAND groundbreaking double-stack structure enhanced through advanced “channel hole etching” technology, helping the company solidify its leadership in the NAND flash market.

In particular, the South Korean tech giant has commenced mass production for the 1Tb TLC 9th-generation V-NAND this month, followed by the quad-level cell (QLC) model in the second half of this year.

The advanced “channel hole etching” technology showcases Samsung’s leadership in process capabilities.

Channel hole etching tech creates electron pathways by stacking mold layers and maximizes fabrication productivity as it enables simultaneous drilling of the industry’s highest cell layer count in a double-stack structure.

As the number of cell layers increases, the ability to pierce through higher cell numbers becomes essential, demanding more sophisticated etching techniques.

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