Samsung
Samsung Galaxy S24 FE could feature Exynos 2400e globally
Samsung Galaxy S24 FE seemingly features an Exynos 2400e chip in the US. It’s expected to be an underclocked variant of the Galaxy S24’s Exynos 2400. Samsung is unlikely to follow its dual-chip strategy with the next FE this year.
Exynos 2400e in US variant of Samsung Galaxy S24 FE benchmarked on Geekbench. The handset scored 1996 points in single-core and 5678 points in multi-core tests. Its main Cortex-X4 core appears to be underclocked from 3.2 GHz down to 3.11 GHz.
Do remember these are not the final performance benchmarks. The company is still working on the device, and the chipset and OS will be optimized. We expect the performance to be improved from the current state before the official debut.
Galaxy S24 FE
Samsung could launch the Galaxy S24 FE in October this year. The smartphone is said to feature a 6.7-inch Super AMOLED display with 120Hz refresh rate and 1900nits peak brightness. Previous FE models pack 6.4-inch sAMOLED screens.
The camera specifications are also expected to be upgraded. The Galaxy S24 FE could have a 50-megapixel primary, an 8-megapixel Telephoto, and a 12-megapixel ultrawide camera as well as a 10-megapixel selfie (Infinity-O) snapper.
The handset would take on Google’s Pixel 9 and Apple’s upcoming iPhone SE 2025. We guess it has seven years of OS upgrades support similar to the S24 series. Meanwhile, it will boot Android 14-based One UI 6.1 out of the box.
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Galaxy S25 renders reveal the design decisions of Samsung’s next flagship. Recently, we got our first look at the upcoming Galaxy S25 Ultra. Now, it’s turn for the vanilla model of Samsung’s 2025 flagship lineup.
The Galaxy S25 could feature a 6.17-inch display that could be marketed as 6.2-inch. Despite sporting the same screen size, the phone could be slightly smaller than the S24. This improvement was seemingly made possible by minimizing bezel.
In addition, the Galaxy S25 is said to be slightly smaller and sleeker than its predecessor. The dimensions could measure roughly 146.9 x 70.4 x 7.2mm. The frame could look like the iPhone, featuring a flat frame – the same as the S25 Ultra.
Credits: Onleaks via AndroidHeadlines
The left frame remains vacant, while you get volume rockers and a power key on the right. The bottom side features a primary mic, USB C-Type port, and speaker grille. The top boasts a secondary microphone for clear calling.
The renders are crafted based on CAD data, which is subject to modification. We don’t expect any major change on the front (display) side of the device. The camera design, specifically the textured ring, could be altered in the next set of renders.
Samsung could launch the Galaxy S25 series in January 2025. The company is said to be using Snapdragon chipset internationally. Due to yield concerns and performance gap with Snapdragon, Exynos 2400 is difficult to ee utilized.
Samsung today pushed the One UI 6.1.1 for 2023 flagships in South Korea. Samsung will likely expand the One UI 6.1.1 update to the Galaxy S23 series, Galaxy Z Flip 5, Galaxy Z Fold 5, and Galaxy Tab S9 series in the US next week.
The Korean tech giant has not officially disclosed a certain release timeline. Previous records suggest that the US variants of the Galaxy S23 series, Z Flip 5, Z Fold 5, and Tab S9 series will get One UI 6.1.1 in the US next week.
To solidify the claim, we refer to the recent revelation from Telus. The Canadian carrier is expected to roll out the One UI upgrade to many Galaxies on September 15. We wish Samsung to go beyond expectations and push the update earlier.
On September 5, Samsung announced the expansion of One UI 6.1.1 to the S24 series. The company upgraded the S24 series in South Korea on September 6th, followed by Asia, Europe, and the United States on September 9th.
The update also adds Galaxy AI-powered Composer feature. When you need to write something, you can start by giving Samsung Keyboard’s new Composer a short request or snippet of text, then let Galaxy AI do the rest.
Apart from new Galaxy AI features, Samsung’s new One UI 6.1.1 allows you to design your profile card with your name and picture that other Galaxy users can see when you call them or when they view your contact info.
Samsung started mass production of 1TB QLC 9th-gen V-NAND semiconductor to gain an edge in the AI era. This achievement suggests Samsung is solidifying its leadership in the high-capacity, high-performance NAND flash market.
As the enterprise SSD market shows rapid growth with stronger demand for AI applications, Samsung will continue to solidify its leadership in the segment through our QLC and TLC 9th-gen V-NAND.
The South Korean tech giant plans to expand applications of the QLC 9th-generation V-NAND, starting with branded consumer products and extending into mobile Universal Flash Storage (UFS), PCs and server SSDs for customers.
Samsung’s QLC 9th-gen V-NAND brings several innovations. The area of the cells and the peripheral circuits have been optimized via TLC 9th-gen V-NAND. Adopting Designed Mold has improved data retention performance by nearly 20%.
In addition, the company’s QLC 9th-gen V-NAND has doubled write performance and improved data input/output speed by 60%. Data read and write power consumption decreased by about 30% and 50% respectively.
Summary:
The latest QLC V-NAND combines several breakthrough technologies, including Channel Hole Etching which enables the highest layer count in the industry with a double stack structure. Industry-first QLC and TLC 9th-gen V-NAND delivers optimum memory across various AI applications.