SK Hynix beats Samsung in 1c DDR5 DRAM development

Samsung rival SK Hynix managed to develop 1c DDR5 DRAM. The company became with world’s first to develop advanced memory technology. It will pave the way for even faster mobile experiences amid the AI boom.

SK Hynix today announced that it has developed a Gen 6 10nm 1c 16Gb DDR5 DRAM. The Korean company achieved this milestone, defeating its local rival, Samsung Electronics. SK Hynix said it will start supplying its latest DRAM next year.

It’s worth noting that Samsung commenced manufacturing 1b DDR5 DRAM in May. Both companies have had back and forth between them as Samsung in May outpaced SK Hynix by 10 days in starting to manufacture the memory.

The 1c DDR5 has a speed of 8Gbps, 11% faster than 1b, while power efficiency was also improved by 9%. The chip was developed 1c by expanding its previous 1b platform.

The South Korean memory vendor developed new materials for certain EUV processes and increased productivity by 30% compared to its predecessor.

“We are committed to providing differentiated values to customers by applying the 1c technology equipped with the best performance and cost competitiveness to our major next-generation products including HBM1, LPDDR62, and GDDR73,” said Head of DRAM Development Kim Jonghwan. “We will continue to work towards maintaining the leadership in the DRAM space and position as the most-trusted AI memory solution provider.”