Samsung solidifies AI era with mass production of QLC 9th-Gen V-NAND

Samsung started mass production of 1TB QLC 9th-gen V-NAND semiconductor to gain an edge in the AI era. This achievement suggests Samsung is solidifying its leadership in the high-capacity, high-performance NAND flash market.

As the enterprise SSD market shows rapid growth with stronger demand for AI applications, Samsung will continue to solidify its leadership in the segment through our QLC and TLC 9th-gen V-NAND.

The South Korean tech giant plans to expand applications of the QLC 9th-generation V-NAND, starting with branded consumer products and extending into mobile Universal Flash Storage (UFS), PCs and server SSDs for customers.

Samsung’s QLC 9th-gen V-NAND brings several innovations. The area of the cells and the peripheral circuits have been optimized via TLC 9th-gen V-NAND. Adopting Designed Mold has improved data retention performance by nearly 20%.

In addition, the company’s QLC 9th-gen V-NAND has doubled write performance and improved data input/output speed by 60%. Data read and write power consumption decreased by about 30% and 50% respectively.

Summary:

The latest QLC V-NAND combines several breakthrough technologies, including Channel Hole Etching which enables the highest layer count in the industry with a double stack structure. Industry-first QLC and TLC 9th-gen V-NAND delivers optimum memory across various AI applications.